• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    PURPOSE: An aluminum deposited plastic film for condenser and method thereof is provided to prevent capacitance from reducing as time of use goes by, and to reduce the unit cost of production. CONSTITUTION: An aluminum deposited plastic film for condenser and method thereof includes a plastic film, an aluminum oxide film on the plastic film and an aluminum film on the aluminum oxide film. The aluminum oxide film has a 50 ¯ 150 Angstrom thick, and a transition layer which is composed of mixing aluminum oxide and aluminum. And the transition layer is contact with the aluminum film. The thickness of the aluminum oxide film and the aluminum in all is 300 ¯ 1000 Angstrom. The plastic film is a polyethylene terephthalate, a polypropylene, or polycarbonate. The aluminum oxide film is deposited purely on the film in an early stage, and gradually the mixing aluminum oxide and aluminum film is formed reducing the rate of oxidation.
    公开号:KR20000060302A
    申请号:KR1019990008488
    申请日:1999-03-13
    公开日:2000-10-16
    发明作者:나종갑
    申请人:박호군；한국과학기술연구원；
    IPC主号:
    专利说明:

    Aluminum vapor-deposited plastic film for capacitors and its manufacturing method {ALUMINUM METALLIZED PLASTIC FILMS FOR CAPACITOR USE AND ITS MANUFACTURING METHOD}
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an aluminum vapor deposition plastic film used for the manufacture of a metal vapor deposition plastic film capacitor (hereinafter referred to as an "MF capacitor") and a method of manufacturing the same. The present invention relates to a method of manufacturing an aluminum-deposited plastic film by continuously vacuum depositing an aluminum thin film on an aluminum oxide thin film.
    Conventional aluminum vapor-deposited plastic film commonly used in MF capacitors generally uses aluminum electrodes, which are used as electrodes on one or both sides of 2-12 μm-thick plastic films serving as dielectrics, with 150-500 sheet resistance of 10-2Ω / ㎠. Manufactured by vacuum deposition at a thickness of Å, the plastic film material mainly used as the dielectric may include polyethylene terephthalate, polypropylene and polycarbonate.
    A schematic structure of an aluminum MF capacitor using an aluminum deposited plastic film is shown in FIG. 1.
    As shown in the drawing, the aluminum MF capacitor deposits an aluminum thin film on the surface of the tape-shaped plastic film 1 having a predetermined width so that no deposition is performed on the edge portion of the film so that the non-deposition portion 1a is left. The aluminum vapor-deposited plastic film 3 was continuously wound into a cylindrical shape to form a cylindrical body 4, and then zinc alloy was sprayed on both ends of the body 4 to form an electrode 5, and lead wires 6 and 6 on the electrode 5 were formed. It was made by welding. The conventional aluminum MF capacitor manufactured by the above method is able to form a thin film thickness due to the low electrical resistance characteristics (2.65 × 10 -6 Ω.cm) of aluminum, so that the self-healing property is excellent and reliable. Due to its high and excellent corrosion resistance properties, it is easy to store and has high adhesion strength of aluminum-deposited thin film to plastic films, making it suitable for manufacturing dry MF capacitors.
    On the other hand, the MF capacitor manufactured using the conventional aluminum vapor-deposited plastic film has a disadvantage in that the capacitance decreases with the use of a direct current or alternating current when it is used. This phenomenon is known to be caused by the fact that aluminum is dispersed by moisture in the state where electricity is applied. Accordingly, various methods of manufacturing a new metal-deposited plastic film have been developed to improve the above problems of the aluminum MF capacitor.
    Iii) a method of improving the corrosion resistance by forming aluminum oxide on the surface by water treatment of the deposited aluminum-deposited plastic film (Japanese Patent Laid-Open No. 5-55083)
    Ii) A method for producing a multilayer structure in the form of aluminum oxide / aluminum / aluminum oxide / aluminum for depositing aluminum on a plastic film (Japanese Patent Laid-Open No. 2-62236)
    However, in the method of i), when the deposited aluminum vapor-deposited plastic film is formed through the water treatment process again to form an oxide film, a new process is added to increase the production cost, and there is a concern that the film is unevenly oxidized during water treatment to increase thin film loss. There is a fear that moisture may remain and thus promote oxidation. In addition, since the MF capacitor is manufactured by winding an aluminum vapor-deposited plastic film, the moisture that affects the oxidation of the aluminum vapor-deposited film is more likely to be supplied from the inside of the film than from the outside.
    On the other hand, in the method of ii), in order to manufacture a multilayer structure of aluminum oxide / aluminum / aluminum oxide / aluminum in order to deposit aluminum on a plastic film, the production cost is very high and the production cost is very high. In the case of depositing aluminum, there is a fear that the adhesive strength is low and easily peeled off.
    An object of the present invention is to solve the above problems of the aluminum vapor-deposited plastic film for manufacturing a conventional MF capacitor.
    1 is a perspective view showing the structure of a general wound MF capacitor.
    FIG. 2 is a result of OJ analysis of aluminum-deposited plastic film manufactured by the method of Example 2 of the present invention. FIG.
    3 is a result of the ozone analysis of the aluminum-deposited plastic film produced by the method of the comparative example of the present invention.
    4 is a graph showing the volumetric strain behavior of the wound capacitors prepared in the practice of the present invention and in the comparative example.
    5 is a graph showing the breakdown voltage of the winding-type capacitor manufactured by Examples and Comparative Examples of the present invention.
    The present invention preferably comprises a plastic film which is preferably polyethylene terephthalate, polypropylene or polycarbonate, an aluminum oxide film formed on the plastic film, and an aluminum film formed on the aluminum oxide film. The film has a thickness of 50 to 150 GPa and has a transition layer in which aluminum oxide and aluminum are mixed on the side in contact with the aluminum film, and the aluminum oxide plastic film for capacitors having a thickness of 300 to 1000 GPa in total thickness of the aluminum oxide film and the aluminum film. To provide.
    Further, the present invention preferably deposits an aluminum oxide film on the plastic film, preferably polyethylene terephthalate, polypropylene or polycarbonate, to a thickness of 50 to 150 GPa, and deposits an aluminum film on the aluminum oxide film. In the initial stage of deposition, only the aluminum oxide film is deposited and gradually decreases the oxidation degree to form an aluminum oxide film in the form of a mixture of aluminum oxide and aluminum, and deposited so that the total thickness of the aluminum oxide film and the aluminum film can be 300 to 1000 Å. It provides a method for producing an aluminum vapor-deposited plastic film for a capacitor.
    Here, an aluminum-copper alloy (copper 3% or less) may be used in place of aluminum in the deposition of the aluminum oxide film and the aluminum film.
    In the present invention, in depositing an aluminum oxide thin film on a plastic film with a thickness of 50-150 Å, aluminum oxide is deposited at the initial stage of deposition, but gradually decreases the oxidation degree so that aluminum oxide and aluminum are mixed and eventually aluminum is deposited. It is characterized by depositing a two-layer thin film having a total thickness of 300-1000 시켜 by depositing a transition film having a film and then continuously vacuum depositing aluminum. As described above, the deposition of the initial aluminum oxide thin film in the form of a transition layer such that the degree of oxidation decreases as the deposition progressed could improve the adhesion with the aluminum thin film. In this method of depositing a thin oxide film, a small amount of oxygen or oxygen-containing gas is sprayed onto the surface of the plastic film immediately before deposition, and aluminum oxide is initially deposited by the oxygen, but as the deposition proceeds, oxygen on the plastic film is exhausted or Alternatively, the amount of oxygen remaining decreases with oxidation so that aluminum is not sufficiently oxidized, and then only aluminum is deposited.
    On the other hand, in the production of aluminum-deposited plastic film according to the method of the present invention, it was found that the addition of 3% or less copper to aluminum improves the adhesion more effectively, which is 0.377 volt, respectively. And -1.662 votl were thought to be due to the fact that aluminum is at the oxidation potential and copper is at the reduction potential. With this reversed potential difference, aluminum is oxidized first in the oxidizing atmosphere and copper which is not oxidized is transferred to the nucleus during the subsequent deposition process. It was considered to act to improve adhesion.
    In the present invention, the thickness of the aluminum oxide and the transition layer was 50-150 150 suitable, but when thinner than this, it was difficult to produce the aluminum oxide and the transition layer, the adhesion of the aluminum deposited on the resulting layer was poor, and the moisture easily penetrated the corrosion resistance. The properties did not improve either. On the other hand, when the thickness of the aluminum oxide and the transition layer is thicker than 150 kPa, the electrical conductivity of this layer is low, so that the thickness of the aluminum layer should be deposited thicker, thereby deteriorating the self-recovery characteristics. On the other hand, the amount of copper added to aluminum was less than 3%, but if it is added, the latent heat of condensation of copper is 72.7 kcal / mol, which is higher than that of 69.5 kcal / mol of aluminum. Because it was.
    Hereinafter, the present invention will be described in detail with reference to Examples.
    Example 1
    Aluminum oxide having a thickness of 50 mm 3 on the surface of the plastic through the nozzle just before being deposited in the deposition of an aluminum thin film with a width of the non-deposited portion of 2 mm and an aluminum deposited film of 48 mm on a polypropylene film using a continuous evaporator; A transition layer of aluminum oxide and aluminum and an aluminum deposition layer having a thickness of 450 Å were continuously deposited to prepare an aluminum deposited plastic film having a sheet resistance of 5Ω / cm 2. Using the aluminum vapor-deposited plastic film obtained through such a manufacturing process, a series of processes including winding → compression → thermal spraying → lead wire connection as a conventional MF capacitor manufacturing process were performed to prepare a 2 μF capacitor. In order to examine the characteristics of the MF capacitors manufactured in this way, the MF capacitors were placed in a constant temperature and humidity chamber at 90 ° C and 80% relative humidity, and 300V and 60Hz of alternating current were applied to measure the change in capacitance according to the change in standing time. The results are shown in FIG. In addition, the breakdown voltage was measured by applying a DC voltage to the MF capacitor, and the result is shown in FIG. 5.
    Example 2
    Using a continuous evaporator, oxygen was sprayed onto the surface of the plastic film through a nozzle immediately before deposition in depositing an aluminum thin film with a width of 2 mm of non-deposited portion and 48 mm of an aluminum deposited film on a polypropylene film. Was deposited to continuously deposit the aluminum oxide and the aluminum oxide and aluminum transition layer of 150 증착 thickness and 350 Å thickness on the plastic surface to prepare an aluminum-deposited plastic film. The OJ analysis of the aluminum vapor-deposited plastic film thus prepared is shown in FIG. 2. Using the aluminum vapor-deposited plastic film obtained through such a manufacturing process, a series of processes including sphere winding → compression → thermal spraying → lead wire connection as a conventional MF capacitor manufacturing process were performed to prepare a 2 μF capacitor. In order to determine the characteristics of the thus prepared MF capacitor, the capacitance change and the breakdown voltage were measured according to the method of Example 1, and the results are shown in FIGS. 4 and 5.
    Example 3
    Using a continuous evaporator, the thickness of the non-deposited portion on the polypropylene film is 2 mm and the width of the aluminum-copper alloy deposited film is 48 mm. An aluminum oxide-deposited plastic film was produced by successively depositing an oxide alloy layer having a thickness of 60 Hz, a transition layer of an alloy and an alloy, and an alloy deposition layer having a thickness of 400 Hz, using the aluminum-deposited plastic film obtained through such a manufacturing process. As a conventional MF capacitor manufacturing process, a series of processes including winding → compression → spraying → lead wire connection were performed to prepare a MF capacitor having a capacity of 2 μF. In order to determine the characteristics of the MF capacitor manufactured as described above, the capacitance change and the dielectric breakdown voltage were measured according to the method of Example 1, and the results are shown in FIGS. 4 and 5.
    Example 4
    In the deposition of an aluminum-copper alloy thin film on a polypropylene film using a continuous evaporator with a width of 2 mm of non-deposition on a polypropylene film and a width of 48 mm on an aluminum-copper alloy deposited film, oxygen is deposited on the surface of the plastic film through the nozzle just before being deposited. And aluminum and 3% copper alloy were continuously deposited on the surface of the plastic to deposit 120 120 thick oxide alloy layer, transition layer of oxidized alloy and alloy, and 880 두께 thick alloy deposited layer on aluminum. A film was prepared. Using the aluminum-copper alloy deposited plastic film obtained through such a manufacturing process, a series of processes including winding → compression → thermal spraying → lead wire connection as a conventional MF capacitor manufacturing process were performed to prepare a 2 μF capacitor. In order to determine the characteristics of the thus prepared MF capacitor, the capacitance change and the breakdown voltage were measured according to the method of Example 1, and the results are shown in FIGS. 4 and 5.
    Comparative example
    Using a continuous evaporator, an aluminum thin film was deposited on the polypropylene film with a width of 2 mm for the non-deposited portion and a width of the aluminum deposition film of 48 mm to prepare an aluminum deposited plastic film having a thickness of 350 mm 3. The OJ analysis results of the aluminum vapor-deposited plastic film thus prepared are shown in FIG. 3. Using the aluminum vapor-deposited plastic film obtained through such a manufacturing process, a series of processes including winding → compression → thermal spraying → lead wire connection as a conventional MF capacitor manufacturing process were performed to prepare a 2 μF capacitor. In order to determine the characteristics of the MF capacitor manufactured as described above, the capacitance change and the dielectric breakdown voltage were measured according to the method of Example 1, and the results are shown in FIGS. 4 and 5.
    In the graphs of FIGS. 2 and 3 showing the results of Auger analysis of the aluminum-deposited plastic film manufactured by the method of Examples and Comparative Examples, aluminum oxide is formed on the surface of the plastic film, and aluminum oxide and aluminum are gradually It can be seen that it has a mixed transition film and eventually has a form in which aluminum is deposited, and in the case of the comparative example, it is made of an aluminum metal film. Oxygen peaks seen on the surface in this figure are usually found in metal thin films due to the adsorption or partial oxidation of oxygen on the metal film surface. In addition, in the graph of FIG. 4 showing the change in capacitance with the passage of time of the MF capacitors manufactured by the methods of Examples and Comparative Examples, and the breakdown voltage of FIG. 5, the MF capacitor of the embodiment of the present invention is compared with the MF capacitor of the comparative example. It can be seen that the capacitance change is small and the dielectric breakdown voltage is high.
    According to the present invention, it is possible to solve the problems of the conventional aluminum-deposited plastic film for MF capacitor manufacturing.
    权利要求:
    Claims (4)
    [1" claim-type="Currently amended] It consists of a plastic film, an aluminum oxide film formed on the plastic film, and an aluminum film formed on the aluminum oxide film, wherein the aluminum oxide film has a thickness of 50 to 150 GPa and has aluminum oxide on the side in contact with the aluminum film. An aluminum vapor-deposited plastic film for capacitors having a transition layer in which aluminum is mixed, wherein the aluminum oxide film and the aluminum film have a total thickness of 300 to 1000 GPa.
    [2" claim-type="Currently amended] The aluminum-deposited plastic film for a capacitor according to claim 1, wherein an aluminum-copper alloy (copper 3% or less) is used in place of aluminum for forming the aluminum oxide film and the aluminum film.
    [3" claim-type="Currently amended] Depositing an aluminum oxide film on the plastic film to a thickness of 50 to 150 GPa;
    Depositing an aluminum film on the aluminum oxide film;
    In the initial stage of deposition of the aluminum oxide film, only the aluminum oxide film is deposited, and gradually decreases the oxidation degree to form an aluminum oxide film in the form of a mixture of aluminum oxide and aluminum, and the total thickness of the aluminum oxide film and the aluminum film is 300-1000 kPa. Method for producing an aluminum vapor-deposited plastic film for a capacitor, characterized in that the deposition to be possible.
    [4" claim-type="Currently amended] 4. The aluminum-deposited plastic film for capacitors according to claim 3, wherein an aluminum-copper alloy (copper 3% or less) is used in place of aluminum for the formation of the aluminum oxide film and the aluminum film.
    类似技术:
    公开号 | 公开日 | 专利标题
    AU2016277576B2|2018-01-25|Electrode foil, current collector, electrode, and energy storage element using same
    Hu et al.2002|Capacitive and textural characteristics of hydrous manganese oxide prepared by anodic deposition
    US7169284B1|2007-01-30|High surface area cathode for electrolytic capacitors using conductive polymer
    US6206937B1|2001-03-27|Solid electrolytic capacitors comprising a conductive layer made of a polymer of pyrrole or its derivative and method for making the same
    US6793690B2|2004-09-21|Conductive composition precursor, conductive composition, solid electrolytic capacitor, and their manufacturing method
    US6519136B1|2003-02-11|Hybrid dielectric material and hybrid dielectric capacitor
    US5790368A|1998-08-04|Capacitor and manufacturing method thereof
    US5914852A|1999-06-22|Solid electrolyte capacitor and its manufacture
    JP5305569B2|2013-10-02|Electrolytic capacitor manufacturing method and electrolytic capacitor
    JP4836887B2|2011-12-14|Electrolytic capacitor manufacturing method and electrolytic capacitor
    Ozkan et al.2020|Highly Conducting Spaced TiO $ _2 $ Nanotubes Enable Defined Conformal Coating with Nanocrystalline Nb $ _2 $ O $ _5 $ and High Performance Supercapacitor Applications
    US7460352B2|2008-12-02|Flexible dielectric film and method for making
    EP0953996A2|1999-11-03|Capacitor and its manufacturing method
    Hu et al.2000|Cyclic voltammetric deposition of hydrous ruthenium oxide for electrochemical capacitors: effects of codepositing iridium oxide
    US6515847B1|2003-02-04|Solid electrolyte capacitor and its manufacturing method
    JP2778495B2|1998-07-23|Heat-resistant conductive polymer, solid electrolytic capacitor using the conductive polymer, and method of manufacturing the same
    US8213159B2|2012-07-03|Electrode foil, method of manufacturing electrode foil, and electrolytic capacitor
    JP2005513811A|2005-05-12|Electrode for energy storage device
    JP2007300126A|2007-11-15|High temperature capacitor and method of manufacturing the same
    Wu et al.2006|Comparative studies of nickel oxide films on different substrates for electrochemical supercapacitors
    Hu et al.2007|Anodic deposition of hydrous ruthenium oxide for supercapacitors
    Broughton et al.2004|Investigation of thin sputtered Mn films for electrochemical capacitors
    Taberna et al.2006|Electrode surface treatment and electrochemical impedance spectroscopy study on carbon/carbon supercapacitors
    TWI261849B|2006-09-11|Solid electrolytic capacitor and its manufacturing method
    US6804109B1|2004-10-12|Solid electrolyte capacitor having transition metal oxide underlayer and conductive polymer electrolyte
    同族专利:
    公开号 | 公开日
    KR100305722B1|2001-09-26|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1999-03-13|Application filed by 박호군, 한국과학기술연구원
    1999-03-13|Priority to KR1019990008488A
    2000-10-16|Publication of KR20000060302A
    2001-09-26|Application granted
    2001-09-26|Publication of KR100305722B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019990008488A|KR100305722B1|1999-03-13|1999-03-13|Aluminum metallized plastic films for capacitor use and its manufacturing method|
    [返回顶部]